SI4416DY datasheet(2/13 Pages) PHILIPS

部件名	SI4416DY

功能描述	N-channel enhancement mode field-effect transistor

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制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

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Philips Semiconductors

Si4416DY

N-channel enhancement mode ﬁeld-effect transistor

Product data

Rev. 01 — 05 June 2001

2 of 13

9397 750 08299

5.

Quick reference data

6.

Limiting values

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

VDS

drain-source voltage (DC)

Tj =25to150 °C

−

30

V

ID

drain current

Tamb =25 °C; pulsed; tp ≤ 10 s

−

9A

Ptot

total power dissipation

Tamb =25 °C; pulsed; tp ≤ 10 s

−

2.5

W

Tj

junction temperature

−

150

°C

RDSon

drain-source on-state resistance

VGS = 10 V; ID = 9 A

1418m

Ω

VGS = 4.5 V; ID = 7.3 A

2128m

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

Tj =25to150 °C

−

30

V

VGS

gate-source voltage (DC)

−±20

V

ID

drain current

Tamb =25 °C; pulsed; tp ≤ 10 s; Figure 2 and 3

−

9A

Tamb =70 °C; pulsed; tp ≤ 10 s; Figure 2

−

7.2

A

IDM

peak drain current

Tamb =25 °C; pulsed; tp ≤ 10 µs; Figure 3

−

50

A

Ptot

total power dissipation

Tamb =25 °C; pulsed; tp ≤ 10 s;

−

2.5

W

Tamb =70 °C; pulsed; tp ≤ 10 s; Figure 1

−

1.6

W

Tstg

storage temperature

−55

+150

°C

Tj

operating junction temperature

−55

+150

°C

Source-drain diode

IS

source (diode forward) current (DC)

Tamb =25 °C; pulsed; tp ≤ 10 s

−

2.1

A

类似零件编号 - SI4416DY

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	SI4416DY	265Kb / 3P	Single N-Channel MOSFET
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Vishay Siliconix	SI4416DY-T1	47Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. E, 26-May-03
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