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SI2302DS 数据表(PDF) 6 Page - NXP Semiconductors |
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SI2302DS 数据表(HTML) 6 Page - NXP Semiconductors |
6 / 12 page Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor Product data Rev. 02 — 20 November 2001 6 of 12 9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj =25 °C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03ae93 0 2 4 6 8 10 0 0.5 1 1.5 VDS (V) ID (A) 2 V 2.5 V 3 V 4.5 V VGS = 1.5V 03ae95 0 2 4 6 8 10 0123 VGS (V) ID (A) VDS > ID x RDSon Tj = 150 ºC 25 ºC 03ae94 0.05 0.06 0.07 0.08 0.09 0.1 02 46 8 10 ID (A) RDSon ( Ω) Tj = 25 ºC VGS = 2.5 V 4.5 V 3 V 03ad57 0 0.4 0.8 1.2 1.6 2 -60 0 60 120 180 Tj (ºC) a a R DSon R DSon 25 C ° () ---------------------------- = |
类似零件编号 - SI2302DS |
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类似说明 - SI2302DS |
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