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IRL3803VLPBF 数据表(PDF) 1 Page - International Rectifier |
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IRL3803VLPBF 数据表(HTML) 1 Page - International Rectifier |
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1 / 10 page  IRL3803VSPbF IRL3803VLPbF HEXFET® Power MOSFET 1/4/05 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθJA Junction-to-Ambient (PCB Mounted, steady state) ––– 40 Thermal Resistance www.irf.com 1 VDSS = 30V RDS(on) = 5.5mΩ ID = 140A S D G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. Description Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 140 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 110 A IDM Pulsed Drain Current 470 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.4 W/°C VGS Gate-to-Source Voltage ± 16 V IAR Avalanche Current 71 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free D2Pak IRL3803VS TO-262 IRL3803VL °C/W PD - 95449 |
类似零件编号 - IRL3803VLPBF |
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类似说明 - IRL3803VLPBF |
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