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BAW56 数据表(PDF) 5 Page - NXP Semiconductors |
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BAW56 数据表(HTML) 5 Page - NXP Semiconductors |
5 / 12 page 2003 Mar 25 5 Philips Semiconductors Product specification High-speed double diode BAW56 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj =25 °C prior to surge. handbook, full pagewidth MBG704 10 tp (µs) 1 IFSM (A) 102 10−1 104 102 103 10 1 Fig.5 Reverse current as a function of junction temperature. 105 10 4 10 200 0 MGA884 100 T ( C) j o IR (nA) 10 3 10 2 75 V 25 V typ max V = 75 V R typ Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 025 VR (V) 2.5 0 0.5 MBH191 1.0 1.5 2.0 5 Cd (pF) 10 15 20 |
类似零件编号 - BAW56_03 |
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类似说明 - BAW56_03 |
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