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BF421L 数据表(PDF) 3 Page - NXP Semiconductors |
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BF421L 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 6 page 2004 Nov 10 3 Philips Semiconductors Product specification PNP high-voltage transistors BF421L; BF423L THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 200 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current VCB = −200 V; IE =0 A −−10 nA VCB = −200 V; IE = 0 A; Tj = 150 °C −−10 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0 A −−10 µA hFE DC current gain VCE = −20 V; IC = −25 mA 50 − VCEsat collector-emitter saturation voltage IC = −30 mA; IB = −5 mA; note 1 −−600 mV Cre feedback capacitance VCE = −30 V; IC =ic = 0 A; f = 1 MHz − 1.6 pF fT transition frequency VCE = −10 V; IC = −10 mA; f = 100 MHz 60 − MHz |
类似零件编号 - BF421L |
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类似说明 - BF421L |
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