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BAT54J 数据表(PDF) 4 Page - NXP Semiconductors |
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BAT54J 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 8 page BAT54J_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 8 March 2007 4 of 8 NXP Semiconductors BAT54J Schottky barrier single diode (1) Tamb = 125 °C (2) Tamb =85 °C (3) Tamb =25 °C (1) Tamb = 125 °C (2) Tamb =85 °C (3) Tamb =25 °C Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Reverse current as a function of reverse voltage; typical values Tamb =25 °C; f = 1 MHz Fig 3. Diode capacitance as a function of reverse voltage; typical values 103 102 10−1 IF (mA) VF (V) 10 1 1.2 0.8 0.4 0 msa892 (3) (2) (1) (3) (2) (1) 010 20 30 VR (V) 103 102 10−1 IR ( µA) 10 1 (1) (2) (3) msa893 010 20 30 0 5 10 15 VR (V) Cd (pF) msa891 |
类似零件编号 - BAT54J |
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类似说明 - BAT54J |
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