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BAP65-02 数据表(PDF) 4 Page - NXP Semiconductors |
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BAP65-02 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2001 May 11 4 Philips Semiconductors Product specification Silicon PIN diode BAP65-02 GRAPHICAL DATA handbook, halfpage 10 1 10−1 MLD499 10−1 1 IF (mA) rD ( Ω) 10 102 Fig.2 Forward resistance as a function of forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage 020 1000 0 200 400 600 800 4 Cd (fF) VR (V) 812 16 MLD500 Fig.3 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 0 1000 (1) (2) (3) (4) (5) 2000 f (MHz) 3000 0 −0.5 −0.1 −0.2 −0.3 −0.4 MLD501 s21 2 ( dB) Fig.4 Insertion loss ( |s21|2) of the diode as a function of frequency; typical values. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25 °C. (1) IF = 0.5 mA. (2) IF = 1 mA. (3) IF = 5 mA. (4) IF =10mA. (5) IF = 100 mA. handbook, halfpage 0 1000 2000 f (MHz) 3000 0 −10 −30 −40 −20 MLD502 s21 2 ( dB) Fig.5 Isolation ( |s21|2) of the diode as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25 °C. |
类似零件编号 - BAP65-02 |
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类似说明 - BAP65-02 |
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