LB123D datasheet(1/1 Pages) DCCOM

部件名	LB123D

功能描述	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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制造商	DCCOM [Dc Components]

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LB123D

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Pinning

1 = Emitter

2 = Collector

3 = Base

Description

Designed for high voltage, high speed switching

circuits, and amplifier applications.

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

VCBO

600

V

Collector-Emitter Voltage

VCEO

400

V

Emitter-Base Voltage

VEBO

8

V

Collector Current(DC)

IC

1

A

Collector Current(Pluse)

IC

2

A

Total Power Dissipation(TC=25oC)

PD

30

W

Junction Temperature

TJ

+150

o

C

Storage Temperature

TSTG

-55 to +150

o

C

Absolute Maximum Ratings(TA=25oC)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

BVCBO

600

-

V

IC=1mA, IE=0

Collector-Emitter Breakdown Voltage

BVCEO

400

-

V

IC=10mA, IB=0

Emitter-Base Breakdown Volatge

BVEBO

8

-

V

IE=1mA, IC=0

Collector Cutoff Current

ICBO

-

10

µA

VCB=600V, IE=0

Emitter Cutoff Current

IEBO

-

10

µA

VBE=9V, IC=0

Collector-Emitter Saturation Voltage(1)

VCE(sat)1

-

0.8

V

IC=0.1A, IB=10mA

VCE(sat)2

-

0.9

V

IC=0.3A, IB=30mA

Base-Emitter Saturation Voltage(1)

VBE(sat)1

-

1.2

V

IC=0.1A, IB=10mA

VBE(sat)2

-

1.8

V

IC=0.3A, IB=30mA

hFE1

10

-

50

-

IC=0.3A, VCE=5V

DC Current Gain(1)

hFE2

10

-

IC=0.5A, VCE=5V

hFE3

6

-

IC=1A, VCE=5V

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Rank

B1

B2

B3

B4

B5

B6

B7

B8

Range

10~17

13~22

18~27

23~32

28~37

33~42

38~47

43~50

Classification of hFE1

TO-126ML

Dimensions in inches and (millimeters)

.090

(2.28)

.123(3.12)

.113(2.87)

.084(2.14)

.074(1.88)

.033(0.84)

.027(0.68)

.163(4.12)

.153(3.87)

.044(1.12)

.034(0.87)

.060(1.52)

.050(1.27)

.084(2.12)

.074(1.87)

.591(15.0)

.551(14.0)

.300(7.62)

.290(7.37)

.148(3.75)

.138(3.50)

.056(1.42)

.046(1.17)

.180

(4.56)

Typ

.146(3.70)

.136(3.44)

.027(0.69)

.017(0.43)

Typ

1 2 3

类似零件编号 - LB123D

制造商	部件名	数据表	功能描述
Sanyo Semicon Device	LB1231	81Kb / 4P	High-Voltage, High- Current Darlington Transistor Array
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	LB1233M	51Kb / 3P	LB1233M
	LB1234	81Kb / 4P	High-Voltage, High- Current Darlington Transistor Array

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