1997 Feb 18

2

Philips Semiconductors

Product specification

NPN microwave power transistor

RZ1214B35Y

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistor providing excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics

and excellent lifetime

• Multicell geometry gives good balance of dissipated

power and low thermal resistance

• Internal input matching ensures good stability and

allows an easier design of wideband circuits.

APPLICATIONS

• Common base class-C wideband pulsed power

amplifiers for L-band radar applications in the

1.2 to 1.4 GHz band.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a SOT443A metal ceramic flange package with the base

connected to the flange.

PINNING - SOT443A

PIN

DESCRIPTION

1

collector

2

emitter

3

base connected to flange

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM314

1

2

3

Top view

e

c

b

QUICK REFERENCE DATA

MODE OF OPERATION

f

(GHz)

(V)

(W)

(dB)

(%)

(

Ω)

1.2 to 1.4

50

≥35

≥7

≥30

see Fig 4

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.