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PZTA14 数据表(PDF) 3 Page - NXP Semiconductors |
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PZTA14 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 14 3 Philips Semiconductors Product specification NPN Darlington transistor PZTA14 THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 100 K/W Rth j-s thermal resistance from junction to soldering point 19 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =30V − 100 nA ICES collector cut-off current VBE = 0; VCE =30V − 100 nA IEBO emitter cut-off current IC = 0; VEB =10V − 100 nA hFE DC current gain VCE = 5 V; (see Fig.2) IC = 10 mA 10000 − IC = 100 mA 20000 − VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA − 1.5 V VBEon base-emitter on-state voltage IC = 100 mA; VCE =5V − 2V fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 125 − MHz |
类似零件编号 - PZTA14 |
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类似说明 - PZTA14 |
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