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PZTA14 数据表(PDF) 3 Page - NXP Semiconductors

部件名 PZTA14
功能描述  NPN Darlington transistor
Download  8 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

PZTA14 数据表(HTML) 3 Page - NXP Semiconductors

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1999 Apr 14
3
Philips Semiconductors
Product specification
NPN Darlington transistor
PZTA14
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
Rth j-s
thermal resistance from junction to soldering point
19
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =30V
100
nA
ICES
collector cut-off current
VBE = 0; VCE =30V
100
nA
IEBO
emitter cut-off current
IC = 0; VEB =10V
100
nA
hFE
DC current gain
VCE = 5 V; (see Fig.2)
IC = 10 mA
10000
IC = 100 mA
20000
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 0.1 mA
1.5
V
VBEon
base-emitter on-state voltage
IC = 100 mA; VCE =5V
2V
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
125
MHz


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