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MC33982BPNA 数据表(PDF) 11 Page - Freescale Semiconductor, Inc

部件名 MC33982BPNA
功能描述  Single Intelligent High-Current Self-Protected Silicon High-Side Switch (2.0 mohm)
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制造商  FREESCALE [Freescale Semiconductor, Inc]
网页  http://www.freescale.com
标志 FREESCALE - Freescale Semiconductor, Inc

MC33982BPNA 数据表(HTML) 11 Page - Freescale Semiconductor, Inc

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Analog Integrated Circuit Device Data
Freescale Semiconductor
11
33982
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
POWER OUTPUT TIMING (CONTINUED)
Overcurrent Low Detection Blanking Time (OCLT[1:0])
00
01
10
11
tOCL0
tOCL1
tOCL2
tOCL3
108
7.0
0.8
0.08
155
10
1.2
0.15
202
13
1.6
0.25
ms
Overcurrent High Detection Blanking Time
tOCH
1.0
10
20
µs
CS to CSNS Valid Time (22)
tCNSVAL
10
µs
Output Switching Delay Time (OSD[2:0])
000
001
010
011
100
101
110
111
tOSD0
tOSD1
tOSD2
tOSD3
tOSD4
tOSD5
tOSD6
tOSD7
52
105
157
210
262
315
367
0.0
75
150
225
300
375
450
525
95
195
293
390
488
585
683
ms
Watchdog Time-out (WD[1:0]) (23)
00
01
10
11
tWDTO0
tWDTO1
tWDTO2
tWDTO3
434
207
1750
875
620
310
2500
1250
806
403
3250
1625
ms
SPI INTERFACE CHARACTERISTICS
Recommended Frequency of SPI Operation
fSPI
3.0
MHz
Required Low State Duration for RST (24)
tWRST
50
167
ns
Notes
22.
Time necessary for the CSNS to be within ±5% of the targeted value.
23.
Watchdog time-out delay measured from the rising edge of WAKE to RST from a sleep state condition to output turn-ON with the output
driven OFF and FSI floating. The values shown are for WDR setting of [00]. The accuracy of tWDTO is consistent for all configured
watchdog timeouts.
24.
RST
low duration measured with outputs enabled and going to OFF or disabled condition.
Table 4. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 4.5 V
≤ V
DD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TA ≤ 150°C unless otherwise
noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise
noted.
Characteristic
Symbol
Min
Typ
Max
Unit


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