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MC33982BPNA 数据表(PDF) 11 Page - Freescale Semiconductor, Inc |
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MC33982BPNA 数据表(HTML) 11 Page - Freescale Semiconductor, Inc |
11 / 34 page Analog Integrated Circuit Device Data Freescale Semiconductor 11 33982 ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS POWER OUTPUT TIMING (CONTINUED) Overcurrent Low Detection Blanking Time (OCLT[1:0]) 00 01 10 11 tOCL0 tOCL1 tOCL2 tOCL3 108 7.0 0.8 0.08 155 10 1.2 0.15 202 13 1.6 0.25 ms Overcurrent High Detection Blanking Time tOCH 1.0 10 20 µs CS to CSNS Valid Time (22) tCNSVAL – – 10 µs Output Switching Delay Time (OSD[2:0]) 000 001 010 011 100 101 110 111 tOSD0 tOSD1 tOSD2 tOSD3 tOSD4 tOSD5 tOSD6 tOSD7 – 52 105 157 210 262 315 367 0.0 75 150 225 300 375 450 525 – 95 195 293 390 488 585 683 ms Watchdog Time-out (WD[1:0]) (23) 00 01 10 11 tWDTO0 tWDTO1 tWDTO2 tWDTO3 434 207 1750 875 620 310 2500 1250 806 403 3250 1625 ms SPI INTERFACE CHARACTERISTICS Recommended Frequency of SPI Operation fSPI – – 3.0 MHz Required Low State Duration for RST (24) tWRST – 50 167 ns Notes 22. Time necessary for the CSNS to be within ±5% of the targeted value. 23. Watchdog time-out delay measured from the rising edge of WAKE to RST from a sleep state condition to output turn-ON with the output driven OFF and FSI floating. The values shown are for WDR setting of [00]. The accuracy of tWDTO is consistent for all configured watchdog timeouts. 24. RST low duration measured with outputs enabled and going to OFF or disabled condition. Table 4. Dynamic Electrical Characteristics (continued) Characteristics noted under conditions 4.5 V ≤ V DD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TA ≤ 150°C unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
类似零件编号 - MC33982BPNA |
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类似说明 - MC33982BPNA |
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