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NE350184C 数据表(PDF) 2 Page - California Eastern Labs

部件名 NE350184C
功能描述  HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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制造商  CEL [California Eastern Labs]
网页  http://www.cel.com
标志 CEL - California Eastern Labs

NE350184C 数据表(HTML) 2 Page - California Eastern Labs

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NE350184C
RECOMMENDED OPERATING CONDITIONS (TA = +25
°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
1
2
3
V
Drain Current
ID
5
10
15
mA
Input Power
Pin
−
−
0
dBm
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS =
−3 V
−
−
10
µA
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
15
−
70
mA
Gate to Source Cutoff Voltage
VGS (off)
VDS = 2 V, ID = 100
µA
−0.2
−
−2.0
V
Transconductance
gm
VDS = 2 V, ID = 10 mA
40
−
−
mS
Noise Figure
NF
VDS = 2 V, ID = 10 mA, f = 20 GHz
−
0.7
1.0
dB
Associated Gain
Ga
11
13.5
−
dB
Data Sheet PG10584EJ01V0S
2


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