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AM42-0007 数据表(PDF) 2 Page - Tyco Electronics |
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AM42-0007 数据表(HTML) 2 Page - Tyco Electronics |
2 / 4 page GaAs MMIC VSAT Power Amplifier, 2.0 W 14.0 - 14.5 GHz AM42-0007 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. V5 2 RoHS Compliant Typical Bias Configuration 5,6,7,8,9 Absolute Maximum Ratings 2,3,4 Parameter Absolute Maximum VDD 12 Volts VGG -10 Volts Power Dissipation 13.2 W RF Input Power +23 dBm Channel Temperature 150°C Storage Temperature -65°C to +150°C IDS 2100 mA 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these survivability limits. 4. Case Temperature (TC) = +25°C. Electrical Specifications: TA = +25°C, VDD = +9 V, VGG =- 5.0 V, Z0 = 50Ω, F = 14.0-14.5 GHz Parameter Test Conditions Units Min. Typ. Max. Linear Gain PIN < 0 dBm dB 19 22 — Input VSWR PIN < 0 dBm Ratio — 2.5:1 2.7:1 Output VSWR PIN < 0 dBm Ratio — 2.7:1 — Saturated Output Power PIN = +14 dBm dBm — 33 — Output Power at P1dB — dBm 31 32 — Output IP31 dBm — 41 — Power Added Efficiency PIN = +14 dBm % — 22 — Bias Current PIN = +14 dBm mA — 18 25 Thermal Resistance 25°C Heat Sink °C/W — 9.5 — Detector Output Voltage RL = 10 K Ω, POUT = +31dBm V — +3.5 — Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 1. IP3 is measured with two +24 dBm output tones @ 1 MHz spacing 5. Nominal bias is obtained by first connecting –5 volts to pin 4 (VGG), followed by connection +9 volts to pin 6 (VDD). Note sequence. 6. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 7. No DC bias voltage appears at the RF ports. 8. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of pin 6. 9. Resistor and capacitors surrounding the amplifier are suggestions and not included as part of the AM42-0007. VDD 6 3.3 µF RF Out 8 RF In 3 0.01 µF VGG 4 GND 1,2,5,9,10 0.01 µF AM42-0007 VDET 7 10 K Ω |
类似零件编号 - AM42-0007 |
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类似说明 - AM42-0007 |
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