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AM42-0007 数据表(PDF) 2 Page - Tyco Electronics

部件名 AM42-0007
功能描述  GaAs MMIC VSAT Power Amplifier 1.4W 14.0 - 14.5GHz
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制造商  MACOM [Tyco Electronics]
网页  http://www.macom.com
标志 MACOM - Tyco Electronics

AM42-0007 数据表(HTML) 2 Page - Tyco Electronics

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GaAs MMIC VSAT Power Amplifier, 2.0 W
14.0 - 14.5 GHz
AM42-0007
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V5
2
RoHS
Compliant
Typical Bias Configuration
5,6,7,8,9
Absolute Maximum Ratings
2,3,4
Parameter
Absolute Maximum
VDD
12 Volts
VGG
-10 Volts
Power Dissipation
13.2 W
RF Input Power
+23 dBm
Channel Temperature
150°C
Storage Temperature
-65°C to +150°C
IDS
2100 mA
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. M/A-COM does not recommend sustained operation near
these survivability limits.
4. Case Temperature (TC) = +25°C.
Electrical Specifications: TA = +25°C, VDD = +9 V, VGG =- 5.0 V, Z0 = 50Ω, F = 14.0-14.5 GHz
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Linear Gain
PIN < 0 dBm
dB
19
22
Input VSWR
PIN < 0 dBm
Ratio
2.5:1
2.7:1
Output VSWR
PIN < 0 dBm
Ratio
2.7:1
Saturated Output Power
PIN = +14 dBm
dBm
33
Output Power at P1dB
dBm
31
32
Output IP31
dBm
41
Power Added Efficiency
PIN = +14 dBm
%
22
Bias Current
PIN = +14 dBm
mA
18
25
Thermal Resistance
25°C Heat Sink
°C/W
9.5
Detector Output Voltage
RL = 10 K Ω, POUT = +31dBm
V
+3.5
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
1. IP3 is measured with two +24 dBm output tones @ 1 MHz spacing
5. Nominal bias is obtained by first connecting –5 volts to pin 4
(VGG), followed by connection +9 volts to pin 6 (VDD). Note
sequence.
6. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.
7. No DC bias voltage appears at the RF ports.
8. For optimum IP3 performance, the VDD bypass capacitors
should be placed within 0.5 inches of pin 6.
9. Resistor and capacitors surrounding the amplifier are
suggestions and not included as part of the AM42-0007.
VDD
6
3.3 µF
RF Out
8
RF In
3
0.01 µF
VGG
4
GND
1,2,5,9,10
0.01 µF
AM42-0007
VDET
7
10 K Ω


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