PHN210 datasheet(6/7 Pages) PHILIPS

部件名	PHN210

功能描述	Dual N-channel enhancement mode TrenchMOS transistor

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制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

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6 / 7 page

Philips Semiconductors

Product specification

Dual N-channel enhancement mode

PHN210

TrenchMOS

TM transistor

MECHANICAL DATA

Fig.16. SOT96 surface mounting package.

Notes

1. This product is supplied in anti-static packaging. The gate-source input must be protected against static

discharge during transport or handling.

2. Refer to Integrated Circuit Packages, Data Handbook IC26.

3. Epoxy meets UL94 V0 at 1/8".

UNIT

A

max.

A1

A2

A3

bp

cD(1)

E(2)

(1)

eHE

LLp

QZ

y

w

v

θ

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

mm

inches

1.75

0.25

0.10

1.45

1.25

0.25

0.49

0.36

0.25

0.19

5.0

4.8

4.0

3.8

1.27

6.2

5.8

1.05

0.7

0.6

0.7

0.3

8

0

o

0.25

0.1

0.25

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

1.0

0.4

SOT96-1

X

w M

θ

A

A1

A2

b p

D

HE

L p

Q

detail X

E

Z

e

c

L

v M A

(A )

3

A

4

5

pin 1 index

1

8

y

076E03S

MS-012AA

0.069

0.010

0.004

0.057

0.049

0.01

0.019

0.014

0.0100

0.0075

0.20

0.19

0.16

0.15

0.050

0.244

0.228

0.028

0.024

0.028

0.012

0.01

0.041

0.004

0.039

0.016

0

2.5

5 mm

scale

SO8: plastic small outline package; 8 leads; body width 3.9 mm

SOT96-1

95-02-04

97-05-22

February 1999

6

Rev 1.000

类似零件编号 - PHN210

制造商	部件名	数据表	功能描述
Nexperia B.V. All right...	PHN210	213Kb / 8P	Dual N-channel enhancement mode TrenchMOSTM transistor January 2002
NXP Semiconductors	PHN210T	94Kb / 7P	Dual N-channel enhancement mode March 1999 Rev 1.000
Nexperia B.V. All right...	PHN210T	438Kb / 14P	Dual N-channel TrenchMOS intermediate level FET Rev. 02 - 15 December 2010

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