TSHG6200

Document Number 81078

Rev. 1.5, 28-Nov-06

Vishay Semiconductors

www.vishay.com

1

94 8390

High Speed Infrared Emitting Diode, 850 nm,

GaAlAs Double Hetero

Description

TSHG6200 is a high speed infrared emitting diode in

GaAlAs double hetero (DH) technology, molded in a

clear, untinted plastic package.

The new technology combines high speed with high

radiant power at wavelength of 850 nm.

Features

• High modulation bandwidth

• Extra high radiant power and radiant

intensity

• Low forward voltage

• Suitable for high pulse current operation

• Standard package T-1¾ (

∅ 5 mm)

• Angle of half intensity

ϕ = ± 10°

• Peak wavelength

λ

• High reliability

• Good spectral matching to Si photodetectors

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

• Infrared radiation source for CMOS cameras

(illumination). High speed IR data transmission.

Parts Table

Absolute Maximum Ratings

e2

Part

Remarks

TSHG6200

MOQ: 4000 pc

Parameter

Test condition

Symbol

Value

Unit

Reverse voltage

5V

Forward current

100

mA

Peak forward current

200

mA

Surge forward current

1A

Power dissipation

250

mW

Junction temperature

100

°C

Operating temperature range

- 40 to + 85

°C

Storage temperature range

- 40 to + 100

°C

Soldering temperature

t

≤ 5 sec, 2 mm from case

260

°C

Thermal resistance junction/

ambient

300

K/W