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FM400TU-3A 数据表(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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FM400TU-3A 数据表(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 5 page  May 2006 150 ±20 200 400 200 200 400 650 880 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 600 MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE V V A A A A A W W °C °C V N • m N • m g *1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi). *2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. *3: TC’ measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5: TTH is thermistor temperature. *6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K) *7: TC measured point is shown in page OUTLINE DRAWING. *8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd “G-746”. Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mounting torque Weight G-S Short D-S Short TC’ = 112°C*3 Pulse*2 L = 10µH Pulse*2 Pulse*2 TC = 25°C TC’ = 25°C*3 Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting M6 Typical value Unit Ratings VDSS VGSS ID IDM IDA IS*1 ISM*1 PD*4 PD*4 Tch Tstg Viso — — ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.) ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.) Conditions Item Symbol Min. — 4.7 — — — — — — — — — — — — — — — — — — — — — — mA V µA mΩ V mΩ nF nC ns ns µC V °C/W Drain cutoff current Gate-source threshold voltage Gate leakage current Static drain-source On-state resistance Static drain-source On-state voltage Lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Source-drain voltage Thermal resistance Contact thermal resistance VDS = VDSS, VGS = 0V ID = 20mA, VDS = 10V VGS = VGSS, VDS = 0V ID = 200A VGS = 15V ID = 200A VGS = 15V ID = 200A terminal-chip VDS = 10V VGS = 0V VDD = 80V, ID = 200A, VGS = 15V VDD = 80V, ID = 200A, VGS1 = VGS2 = 15V RG = 6.3Ω, Inductive load switching operation IS = 200A IS = 200A, VGS = 0V MOSFET part (1/6 module)*7 MOSFET part (1/6 module)*3 Case to fin, Thermal grease Applied*8 (1/6 module) Case to fin, Thermal grease Applied*3, *8 (1/6 module) Unit Limits IDSS VGS(th) IGSS rDS(ON) (chip) VDS(ON) (chip) R(lead) Ciss Coss Crss QG td(on) tr td(off) tf trr*1 Qrr*1 VSD*1 Rth(ch-c) Rth(ch-c’) Rth(c-f) Rth(c’-f’) Conditions Item Symbol Typ. — 6 — 2.6 4.8 0.52 0.96 0.8 1.12 — — — 1300 — — — — — 7.0 — — — 0.1 0.09 Max. 1 7.3 1.5 3.55 — 0.71 — — — 75 10 6 — 400 300 450 200 200 — 1.3 0.19 0.142 — — Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C THERMISTOR PART Min. — — Unit Limits Conditions Parameter Symbol Typ. 100 4000 Max. — — kΩ K Resistance B Constant TTH = 25°C*5 Resistance at TTH = 25°C, 50°C*5 RTH*6 B*6 |
类似零件编号 - FM400TU-3A |
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类似说明 - FM400TU-3A |
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