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IRFPS30N60KPBF 数据表(PDF) 1 Page - International Rectifier |
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IRFPS30N60KPBF 数据表(HTML) 1 Page - International Rectifier |
1 / 8 page IRFPS30N60KPbF 09/15/04 www.irf.com 1 SMPS MOSFET HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS RDS(on) typ. ID 600V 160m Ω 30A Absolute Maximum Ratings Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 520 mJ IAR Avalanche Current ––– 30 A EAR Repetitive Avalanche Energy ––– 45 mJ Avalanche Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.28 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance Super-247™ Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 19 A IDM Pulsed Drain Current 120 PD @TC = 25°C Power Dissipation 450 W Linear Derating Factor 3.6 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 13 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C PD- 95906 |
类似零件编号 - IRFPS30N60KPBF |
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类似说明 - IRFPS30N60KPBF |
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