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FQA8N80_F109 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FQA8N80_F109 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page 3 www.fairchildsemi.com FQA8N80 Rev. A1 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperatue Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 2 468 10 10 -1 10 0 10 1 150 oC 25 oC -55 oC Notes : ※ 1. V DS = 50V 2. 250µs PulseTest V GS, Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom: 5.5V Notes : ※ 1. 250µs PulseTest 2. T C = 25℃ V DS, Drain-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150℃ Notes : ※ 1. V GS = 0V 2. 250µs Pulse Test 25℃ V SD, Source-Drain voltage [V] 0 5 10 15 20 25 30 0.5 1.0 1.5 2.0 2.5 3.0 V GS = 20V V GS = 10V Note: T ※ J = 25℃ I D, Drain Current [A] 0 1020 3040 50 0 2 4 6 8 10 12 V DS = 400V V DS = 160V V DS = 640V Note : I ※ D = 8.4 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 C oss C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd Notes : ※ 1. V GS = 0 V 2. f =1 MHz C rss C iss V DS, Drain-Source Voltage [V] |
类似零件编号 - FQA8N80_F109 |
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类似说明 - FQA8N80_F109 |
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