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FDS8960C_0511 数据表(PDF) 6 Page - Fairchild Semiconductor |
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FDS8960C_0511 数据表(HTML) 6 Page - Fairchild Semiconductor |
6 / 8 page FDS8960C Rev C1(W) www.fairchildsemi.com Typical Characteristics: Q2 (P-Channel) 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -10V -6.0V -4.5V -3.0V -3.5V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 0 5 10 15 20 -ID, DRAIN CURRENT (A) VGS = - 3.5V -6.0V -4.5V -4.0V -10V -5.0V Figure 13. On-Region Characteristics. Figure 14. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 255075 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = -5A VGS = - 10V 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 246 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -2.5A TA = 125 oC TA = 25 oC Figure 15. On-Resistance Variation with Temperature. Figure 16. On-Resistance Variation with Gate-to-Source Voltage. 0 4 8 12 16 20 1.5 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125 oC VDS = -5V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125 oC 25 oC -55 oC Figure 17. Transfer Characteristics. Figure 18. Body Diode Forward Voltage Variation with Source Current and Temperature. |
类似零件编号 - FDS8960C_0511 |
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类似说明 - FDS8960C_0511 |
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