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FDS8960C_0511 数据表(PDF) 5 Page - Fairchild Semiconductor |
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FDS8960C_0511 数据表(HTML) 5 Page - Fairchild Semiconductor |
5 / 8 page FDS8960C Rev C1(W) www.fairchildsemi.com Typical Characteristics: Q1 (N-Channel) 0 2 4 6 8 10 0 2468 10 12 Qg, GATE CHARGE (nC) ID = 7A VDS = 10V 20V 15V 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35 VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss Coss Crss f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100 μs RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 135 oC/W TA = 25 oC 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 135°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 135°C/W TA = 25°C 1 10 100 0.01 0.1 1 10 tAV, TIME IN AVANCHE(ms) TJ = 25 o C Figure 11. Single Pulse Maximum Peak Current Figure 12. Unclamped Inductive Switching Capability |
类似零件编号 - FDS8960C_0511 |
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类似说明 - FDS8960C_0511 |
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