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IRF7301PBF 数据表(PDF) 2 Page - International Rectifier

部件名 IRF7301PBF
功能描述  HEXFET Power MOSFET
Download  9 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF7301PBF 数据表(HTML) 2 Page - International Rectifier

  IRF7301PBF Datasheet HTML 1Page - International Rectifier IRF7301PBF Datasheet HTML 2Page - International Rectifier IRF7301PBF Datasheet HTML 3Page - International Rectifier IRF7301PBF Datasheet HTML 4Page - International Rectifier IRF7301PBF Datasheet HTML 5Page - International Rectifier IRF7301PBF Datasheet HTML 6Page - International Rectifier IRF7301PBF Datasheet HTML 7Page - International Rectifier IRF7301PBF Datasheet HTML 8Page - International Rectifier IRF7301PBF Datasheet HTML 9Page - International Rectifier  
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IRF7301PbF
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.044 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.050
VGS = 4.5V, ID = 2.6A ƒ
––– ––– 0.070
VGS = 2.7V, ID = 2.2A ƒ
VGS(th)
Gate Threshold Voltage
0.70 ––– –––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
8.3 ––– –––
S
VDS = 15V, ID = 2.6A
––– –––
1.0
VDS = 16V, VGS = 0V
––– –––
25
VDS = 16V, VGS = 0V, TJ = 125 °C
Gate-to-Source Forward Leakage
––– ––– 100
VGS = 12V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = - 12V
Qg
Total Gate Charge
––– –––
20
ID = 2.6A
Qgs
Gate-to-Source Charge
––– –––
2.2
nC
VDS = 16V
Qgd
Gate-to-Drain ("Miller") Charge
––– –––
8.0
VGS = 4.5V, See Fig. 6 and 12 ƒ
td(on)
Turn-On Delay Time
––– 9.0 –––
VDD = 10V
tr
Rise Time
–––
42
–––
ID = 2.6A
td(off)
Turn-Off Delay Time
–––
32
–––
RG = 6.0Ω
tf
Fall Time
–––
51
–––
RD = 3.8Ω, See Fig. 10 ƒ
Between lead tip
and center of die contact
Ciss
Input Capacitance
––– 660 –––
VGS = 0V
Coss
Output Capacitance
––– 280 –––
pF
VDS = 15V
Crss
Reverse Transfer Capacitance
––– 140 –––
ƒ = 1.0MHz, See Fig. 5
Notes:
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
––– –––
1.0
V
TJ = 25°C, IS = 1.8A, VGS = 0V ƒ
trr
Reverse Recovery Time
–––
29
44
ns
TJ = 25°C, IF = 2.6A
Qrr
Reverse RecoveryCharge
–––
22
33
nC
di/dt = 100A/µs ƒ
ton
Forward Turn-On Time
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD ≤ 2.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– –––
21
––– –––
2.5
A
S
D
G
IGSS
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
––– 6.0
–––
LD
Internal Drain Inductance
––– 4.0
–––
nH
ns
nA
µA
RDS(ON)
Static Drain-to-Source On-Resistance
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
„ Surface mounted on FR-4 board, t ≤ 10sec.


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