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FAN6520A 数据表(PDF) 11 Page - Fairchild Semiconductor

部件名 FAN6520A
功能描述  Single Synchronous Buck PWM Controller
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

FAN6520A 数据表(HTML) 11 Page - Fairchild Semiconductor

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©2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN6520A Rev. 1.0.5
11
High-Side Losses
Figure 10 shows a MOSFET’s switching interval, with the
upper graph being the voltage and current on the drain-
to-source and the lower graph detailing VGS vs. time with
a constant current charging the gate. The x-axis, there-
fore, is also representative of gate charge (QG). CISS =
CGD + CGS and it controls t1, t2, and t4 timing. CGD
receives the current from the gate driver during t3 (as
VDS is falling). The gate charge (QG) parameters on the
lower graph are either specified or can be derived from
the MOSFET’s datasheet.
Assuming switching losses are about the same for both
the rising edge and falling edge, Q1’s switching losses
occur during the shaded time when the MOSFET has
voltage across it and current through it.
These losses are given by:
PUPPER = PSW + PCOND
(24)
where PUPPER is the upper MOSFET’s total losses, PSW
and PCOND are the switching and conduction losses for a
given MOSFET, RDS(ON) is at the maximum junction tem-
perature (TJ), and tS is the switching period (rise or fall
time) and is t2+t3 (Figure 10).
The driver’s impedance and CISS determine t2, while t3’s
period is controlled by the driver’s impedance and QGD.
Since most of tS occurs when VGS = VSP, use a constant
current assumption for the driver to simplify the calcula-
tion of tS:
Figure 10. Switching Losses and QG
Figure 11. Drive Equivalent Circuit
Most MOSFET vendors specify QGD and QGS. QG(SW)
can be determined as QG(SW) = QGD + QGS – QTH where
QTH is the gate charge required to reach the MOSFET
threshold (VTH). For the high-side MOSFET, VDS = VIN,
which can be as high as 20V in a typical portable appli-
cation. Care should be taken to include the delivery of
the MOSFET’s gate power (PGATE) in calculating the
power dissipation required:
PGATE = QG × VCC × FSW
(28)
where QG is the total gate charge to reach VCC.
P
SW
V
DS
I
L
×
2
------------------------
2
×
t
s
×
⎝⎠
⎛⎞
F
SW
=
(25)
P
COND
V
OUT
V
IN
-----------------
⎝⎠
⎜⎟
⎛⎞
I
OUT
2
×
R
DS ON
()
×
=
(26)
t
s
Q
GSW
()
I
DRIVER
--------------------------
Q
GSW
()
V
CC
V
SP
R
DRIVER
R
GATE
+
---------------------------------------------------------
⎝⎠
⎜⎟
⎛⎞
---------------------------------------------------------------
≈≈
(27)
V
SP
t1
t2
t3
4.5V
t4
t5
Q
G(SW)
V
DS
I
D
Q
GS
Q
GD
V
TH
V
GS
C
ISS
C
GD
C
ISS
CGD
RD
RGATE
CGS
HDRV
5V
SW
VIN
G


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