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BAW76 数据表(PDF) 1 Page - Fairchild Semiconductor

部件名 BAW76
功能描述  BAW76
Download  2 Pages
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

BAW76 数据表(HTML) 1 Page - Fairchild Semiconductor

  BAW76_04 Datasheet HTML 1Page - Fairchild Semiconductor BAW76_04 Datasheet HTML 2Page - Fairchild Semiconductor  
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©2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
December 2004
BAW76 Rev. A
BAW76
Small Signal Diode
Absolute Maximum Ratings * T
a = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics T
C = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VRRM
Maximum Repetitive Reverse Voltage
75
V
IF(AV)
Average Rectified Forward Current
300
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
TSTG
Storage Temperature Range
-65 to +200
°C
TJ
Operating Junction Temperature
175
°C
Symbol
Parameter
Value
Unit
PD
Power Dissipation
500
mW
RθJA
Thermal Resistance, Junction to Ambient
300
°C/W
Symbol
Parameter
Conditions
Min.
Max
Units
VR
Breakdown Voltage
IR = 5µA75
V
VF
Forward Voltage
IF = 100mA
1.0
V
IR
Reverse Leakage
VR = 50V
VR = 50V, TA = 150°C
100
100
nA
µA
CT
Total Capacitance
VR = 0, f = 1.0MHz
2
pF
trr
Reverse Recovery Time
IF = 10mA, VR = 6.0V
RL = 100Ω, Irr = 1mA
IF = IR = 10mA, Irr = 1.0mA,
RL = 100Ω
2
4
ns
ns
DO-35
Color Band Denotes Cathode


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