1997 Feb 20

2

Philips Semiconductors

Product specification

NPN microwave power transistor

MTB10010U

FEATURES

• Input prematching cell allows an

easier design of circuits

• Diffused emitter ballasting resistors

providing excellent current sharing

and withstanding a high VSWR

• Interdigitated structure provides

high emitter efficiency

• Gold metallization realizes very

good characteristics stability and

excellent lifetime

• Multicell geometry gives good

balance of dissipated power and

low thermal resistance.

APPLICATIONS

Common base class C narrowband

pulsed power amplifiers at 1030 MHz

for IFF applications.

DESCRIPTION

NPN silicon planar epitaxial

microwave transistor with internal

input prematching cell in a SOT440A

metal ceramic package with base

connected to flange.

QUICK REFERENCE DATA

narrowband amplifier.

MODE OF

OPERATION

CONDITIONS

f

(MHz)

(V)

(W)

(dB)

(%)

(

Ω)

Class C

δ =1%

1030

24

>9.5

>9.5

>50

see

Figs 5

and 6

PINNING - SOT440A

PIN

DESCRIPTION

1

collector

2

emitter

3

base connected to flange

Fig.1 Simplified outline and symbol.

Marking code: 10010U.

handbook, 4 columns

e

c

b

MAM131

3

1

2

Top view

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.