数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

AM49BDS640AH 数据表(PDF) 5 Page - SPANSION

部件名 AM49BDS640AH
功能描述  Stacked Multichip Package (MCP), Flash Memory and pSRAM CMOS 1.8 Volt-only Simultaneous Read/Write
Download  84 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  SPANSION [SPANSION]
网页  http://www.spansion.com
标志 SPANSION - SPANSION

AM49BDS640AH 数据表(HTML) 5 Page - SPANSION

  AM49BDS640AH Datasheet HTML 1Page - SPANSION AM49BDS640AH Datasheet HTML 2Page - SPANSION AM49BDS640AH Datasheet HTML 3Page - SPANSION AM49BDS640AH Datasheet HTML 4Page - SPANSION AM49BDS640AH Datasheet HTML 5Page - SPANSION AM49BDS640AH Datasheet HTML 6Page - SPANSION AM49BDS640AH Datasheet HTML 7Page - SPANSION AM49BDS640AH Datasheet HTML 8Page - SPANSION AM49BDS640AH Datasheet HTML 9Page - SPANSION Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 84 page
background image
December 5, 2003
Am49BDS640AH
3
A D VA NCE
I N FO RM ATIO N
GENERAL DESCRIPTION
The Am49BDS640AH is a 64 Mbit, 1.8 Volt-only, simulta-
neous Read/Write, Burst Mode Flash memory device, orga-
nized as 4,194,304 words of 16 bits each. This device uses a
single VCC of 1.65 to 1.95 V to read, program, and erase the
memory array. A 12.0-volt VHH on ACC may be used for
faster program performance if desired. The device can also
be programmed in standard EPROM programmers.
At 66 MHz, the device provides a burst access of 11 ns at 30
pF with a latency of 56 ns at 30 pF. At 54 MHz, the device
provides a burst access of 13.5 ns at 30 pF with a latency of
69ns at 30 pF. The device operates within the industrial tem-
perature range of -40°C to +85°C.
The Simultaneous Read/Write architecture provides simul-
taneous operation by dividing the memory space into four
banks. The device can improve overall system performance
by allowing a host system to program or erase in one bank,
then immediately and simultaneously read from another
bank, with zero latency. This releases the system from wait-
ing for the completion of program or erase operations.
The device is divided as shown in the following table:
The VersatileIO™ (VIO) control allows the host system to set
the voltage levels that the device generates at its data out-
puts and the voltages tolerated at its data inputs to the same
voltage level that is asserted on the VIO pin.
The device uses Chip Enable (CE#), Write Enable (WE#),
Address Valid (AVD#) and Output Enable (OE#) to control
asynchronous read and write operations. For burst opera-
tions, the device additionally requires Ready (RDY), and
Clock (CLK). This implementation allows easy interface with
minimal glue logic to a wide range of microprocessors/micro-
controllers for high performance read operations.
The burst read mode feature gives system designers flexibil-
ity in the interface to the device. The user can preset the
burst length and wrap through the same memory space, or
read the flash array in continuous mode.
The clock polarity feature provides system designers a
choice of active clock edges, either rising or falling. The ac-
tive clock edge initiates burst accesses and determines
when data will be output.
The device is entirely command set compatible with the
JEDEC 42.4 single-power-supply Flash standard. Com-
mands are written to the command register using standard
microprocessor write timing. Register contents serve as in-
puts to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch ad-
dresses and data needed for the programming and erase
operations. Reading data out of the device is similar to read-
ing from other Flash or EPROM devices.
The Erase Suspend/Erase Resume feature enables the
user to put erase on hold for any period of time to read data
from, or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved. If a
read is needed from the SecSi Sector area (One Time Pro-
gram area) after an erase suspend, then the user must use
the proper command sequence to enter and exit this region.
The hardware RESET# pin terminates any operation in
progress and resets the internal state machine to reading
array data. The RESET# pin may be tied to the system reset
circuitry. A system reset would thus also reset the device,
enabling the system microprocessor to read boot-up firm-
ware from the Flash memory device.
The host system can detect whether a program or erase op-
eration is complete by using the device status bit DQ7
(Data# Polling) and DQ6/DQ2 (toggle bits). After a program
or erase cycle has been completed, the device automatically
returns to reading array data.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data con-
tents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection measures include a low VCC de-
tector that automatically inhibits write operations during
power transitions. The device also offers two types of data
protection at the sector level. When at VIL, WP# locks the
four highest and four lowest boot sectors.
The device offers two power-saving features. When ad-
dresses have been stable for a specified amount of time, the
device enters the automatic sleep mode. The system can
also place the device into the standby mode. Power con-
sumption is greatly reduced in both modes.
AMD’s Flash technology combines years of Flash memory
manufacturing experience to produce the highest levels of
quality, reliability and cost effectiveness. The device electri-
cally erases all bits within a sector simultaneously via
Fowler-Nordheim tunnelling. The data is programmed using
hot electron injection.
Bank
Quantity
Size
A
84 Kwords
15
32 Kwords
B
48
32 Kwords
C
48
32 Kwords
D
15
32 Kwords
84 Kwords


类似零件编号 - AM49BDS640AH

制造商部件名数据表功能描述
logo
Analog Power
AM4902N ANALOGPOWER-AM4902N Datasheet
166Kb / 3P
   N-Channel 60-V (D-S) MOSFET
logo
VBsemi Electronics Co.,...
AM4902N-T1-PF VBSEMI-AM4902N-T1-PF Datasheet
1Mb / 9P
   Dual N-Channel 60 V (D-S) 175 째C MOSFET
logo
Analog Power
AM4910N ANALOGPOWER-AM4910N Datasheet
197Kb / 6P
   Dual N-Channel 30-V (D-S) MOSFET
logo
SHENZHEN DOINGTER SEMIC...
AM4910N DOINGTER-AM4910N Datasheet
1Mb / 4P
   N-Channel MOSFET uses advanced trench technology
logo
VBsemi Electronics Co.,...
AM4910N-T1-PF VBSEMI-AM4910N-T1-PF Datasheet
1Mb / 9P
   Dual N-Channel 30 V (D-S) MOSFET
More results

类似说明 - AM49BDS640AH

制造商部件名数据表功能描述
logo
SPANSION
S29JL064J70TFI000 SPANSION-S29JL064J70TFI000 Datasheet
1Mb / 61P
   CMOS 3.0 Volt-Only, Simultaneous Read/Write Flash Memory
S71WS512NE0BFWZZ SPANSION-S71WS512NE0BFWZZ Datasheet
2Mb / 142P
   Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71NS-N-MCP SPANSION-S71NS-N-MCP Datasheet
351Kb / 12P
   MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory
S71NS-N SPANSION-S71NS-N Datasheet
574Kb / 13P
   MirrorBit짰 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory
logo
Advanced Micro Devices
AM29DL640D AMD-AM29DL640D Datasheet
1Mb / 54P
   64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
logo
SPANSION
S71WS-P SPANSION-S71WS-P Datasheet
277Kb / 10P
   1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM
S29WS-NL SPANSION-S29WS-NL Datasheet
1Mb / 99P
   256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29NS-J SPANSION-S29NS-J Datasheet
1Mb / 85P
   110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29CD032G SPANSION-S29CD032G Datasheet
1Mb / 93P
   CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
S29PL127J SPANSION-S29PL127J Datasheet
1Mb / 106P
   CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com