©2002 Fairchild Semiconductor Corporation

Rev. B, July 2002

NPN Epitaxial Silicon Transistor

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

* Pulse Test: Pulse

≤ 300µs, Duty Cycle ≤ 2.0%

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

30

V

Collector-Base Voltage

50

V

Emitter-Base Voltage

5.0

V

Collector Current

- Continuous

500

mA

Operating and Storage Junction Temperature Range

-55 ~ +150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristics

Collector-Emitter Breakdown Voltage

30

V

Collector-Base Breakdown Voltage

50

V

Emitter-Base Breakdown Voltage

5.0

V

Collector Cut-off Current

100

nA

Emitter Cut-off Current

100

nA

On Characteristics *

DC Current Gain

100

300

Collector-Emitter Saturation Voltage

0.5

1.0

V

Collector-Emitter On Voltage

0.6

V

Small Signal Characteristics

Current Gain Bandwidth Product

12

pF

Output Capacitance

100

MHz

Symbol

Parameter

Max.

Units

Total Device Dissipation

Derate above 25

°C

625

5.0

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

°C/W

2N3704

NPN General Purpose Amplifier

• This device designed for use as general purpose amplifier and

switches requiring collector currents to 300mA.

• Sourced from Process 10.

• See PN100 for characteristics.

TO-92

1. Emitter 2. Collector 3. Base

1