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AM29LV128MH120EI 数据表(PDF) 3 Page - Advanced Micro Devices

部件名 AM29LV128MH120EI
功能描述  128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29LV128MH120EI 数据表(HTML) 3 Page - Advanced Micro Devices

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DATA SHEET
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 25270
Rev: C Amendment: 7
Issue Date: January 31, 2007
Am29LV128MH/L
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit
™ 3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O
™ Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
— 3 volt read, erase, and program operations
VersatileI/O
™ control
— Device generates data output voltages and tolerates
data input voltages on the CE# and DQ
inputs/outputs as determined by the voltage on the
VIO pin; operates from 1.65 to 3.6 V
Manufactured on 0.23 µm MirrorBit process
technology
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— Two hundred fifty-six 32 Kword (64 Kbyte) sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125
°C
PERFORMANCE CHARACTERISTICS
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 s typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
Low power consumption (typical values at 3.0 V, 5
MHz)
— 13 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Group Unprotect: V
ID-level method
of changing code in locked sector groups
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
This product has been retired and is not recommended for designs. For new and current designs, S29GL256N supersedes Am29LV128MH/L and is the factory-rec-
ommended migration path. Please refer to the S29GL256N datasheet for specifications and ordering information. Availability of this document is retained for refer-
ence and historical purposes only
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