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KM110B 数据表(PDF) 4 Page - NXP Semiconductors |
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KM110B 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 6 page November 1994 4 Philips Semiconductors Preliminary specification Magnetic field sensor KM110B/2 Notes to the characteristics 1. Magnet (Ferroxdure 100) delivers an auxiliary field of Hx = 3.6 kA/m (temperature coefficient: −0.2 %/K). Above 110 °C the auxiliary field Hx will be <3.0 kA/m; stable sensor operation may be threatened by disturbing magnetic fields. 2. . 3. The sensitivity increases and decreases linear with the supply voltage, thus the static output voltage is directly proportional to the supply voltage. 4. Sensor bridge response only. When sensing high speed rotation, the operating frequency may be reduced due to eddy current effects. S V O at Hy 1.6 kA/m = () V O at Hy 0 = () – 1.6 V CC × ----------------------------------------------------------------------------------------------------------------- = M = direction of magnetization. N, S = magnetic poles. Fig.3 Principle of magnetization. handbook, halfpage MBD882 43 2 1 Hy Hx M NS S Tamb =25 °C; Voffset =0. Fig.4 Sensor output characteristic. handbook, halfpage –2 –1 0 2 8 4 –4 –8 0 MBD885 1 V (mV/V) H y (kA/m) O Fig.5 Power derating curve. handbook, halfpage 50 100 125 0 100 MBD892 150 75 50 25 o ( C) (mW) tot 200 P Tamb 0 |
类似零件编号 - KM110B |
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类似说明 - KM110B |
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