IRF830 datasheet(2/7 Pages) PHILIPS

部件名	IRF830

功能描述	PowerMOS transistor Avalanche energy rated

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制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

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2 / 7 page

Philips Semiconductors

Product specification

PowerMOS transistor

IRF830

Avalanche energy rated

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction

-

1

K/W

to mounting base

R

th j-a

Thermal resistance junction

in free air

-

60

-

K/W

to ambient

ELECTRICAL CHARACTERISTICS

T

j = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA

500

-

V

voltage

∆V

(BR)DSS / Drain-source breakdown

V

DS = VGS; ID = 0.25 mA

-

0.1

-

%/K

∆T

j

voltage temperature

coefficient

R

DS(ON)

Drain-source on resistance

V

GS = 10 V; ID = 3 A

-

1.2

1.5

Ω

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 0.25 mA

2.0

3.0

4.0

V

g

fs

Forward transconductance

V

DS = 30 V; ID = 3 A

2

3.6

-

S

I

DSS

Drain-source leakage current V

DS = 500 V; VGS = 0 V

-

1

25

µA

V

DS = 400 V; VGS = 0 V; Tj = 125 ˚C

-

30

250

µA

I

GSS

Gate-source leakage current V

GS = ±30 V; VDS = 0 V

-

10

200

nA

Q

g(tot)

Total gate charge

I

D = 6 A; VDD = 400 V; VGS = 10 V

-

53

64

nC

Q

gs

Gate-source charge

-

4

6

nC

Q

gd

Gate-drain (Miller) charge

-

28

34

nC

t

d(on)

Turn-on delay time

V

DD = 250 V; RD = 39 Ω;

-

10

-

ns

t

r

Turn-on rise time

R

G = 12 Ω

-33

-

ns

t

d(off)

Turn-off delay time

-

92

-

ns

t

f

Turn-off fall time

-

40

-

ns

L

d

Internal drain inductance

Measured from tab to centre of die

-

3.5

-

nH

L

d

Internal drain inductance

Measured from drain lead to centre of die

-

4.5

-

nH

L

s

Internal source inductance

Measured from source lead to source

-

7.5

-

nH

bond pad

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

610

-

pF

C

oss

Output capacitance

-

96

-

pF

C

rss

Feedback capacitance

-

54

-

pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

T

j = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

I

S

Continuous source current

T

mb = 25˚C

-

5.9

A

(body diode)

I

SM

Pulsed source current (body

T

mb = 25˚C

-

24

A

diode)

V

SD

Diode forward voltage

I

S = 6 A; VGS = 0 V

-

1.2

V

t

rr

Reverse recovery time

I

S = 6 A; VGS = 0 V; dI/dt = 100 A/µs

-

390

-

ns

Q

rr

Reverse recovery charge

-

4

-

µC

March 1999

2

Rev 1.000

类似零件编号 - IRF830

制造商	部件名	数据表	功能描述
STMicroelectronics	IRF830	92Kb / 8P	N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET
Comset Semiconductor	IRF830	109Kb / 3P	N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
List of Unclassifed Man...	IRF830	2Mb / 31P	SEMICONDUCTORS
Transys Electronics	IRF830	282Kb / 3P	N-CHANNEL ENHANCEMENT MODE
Nell Semiconductor Co.,...	IRF830	342Kb / 7P	N-Channel Power MOSFET

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