IRF640 datasheet(3/9 Pages) PHILIPS

部件名	IRF640

功能描述	N-channel TrenchMOS transistor

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制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

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Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

IRF640, IRF640S

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

j = 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

I

S

Continuous source current

-

16

A

(body diode)

I

SM

Pulsed source current (body

-

64

A

diode)

V

SD

Diode forward voltage

I

F = 18 A; VGS = 0 V

-

1.0

1.5

V

t

rr

Reverse recovery time

I

F = 18 A; -dIF/dt = 100 A/µs;

-

130

-

ns

Q

rr

Reverse recovery charge

V

GS = 0 V; VR = 25 V

-

0.8

-

µC

August 1999

3

Rev 1.100

类似零件编号 - IRF640

制造商	部件名	数据表	功能描述
STMicroelectronics	IRF640	107Kb / 9P	N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET
Kersemi Electronic Co.,...	IRF640	6Mb / 7P	Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching
Fairchild Semiconductor	IRF640	140Kb / 5P	N-Channel Power MOSFETs, 18A, 150-200V
Nell Semiconductor Co.,...	IRF640	621Kb / 7P	N-Channel Power MOSFET
Fairchild Semiconductor	IRF640	132Kb / 7P	18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs

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类似说明 - IRF640

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