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IRF640 数据表(PDF) 3 Page - NXP Semiconductors |
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IRF640 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 9 page Philips Semiconductors Product specification N-channel TrenchMOS ™ transistor IRF640, IRF640S REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current - - 16 A (body diode) I SM Pulsed source current (body - - 64 A diode) V SD Diode forward voltage I F = 18 A; VGS = 0 V - 1.0 1.5 V t rr Reverse recovery time I F = 18 A; -dIF/dt = 100 A/µs; - 130 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 25 V - 0.8 - µC August 1999 3 Rev 1.100 |
类似零件编号 - IRF640 |
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类似说明 - IRF640 |
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