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4N36 数据表(PDF) 6 Page - Texas Instruments |
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4N36 数据表(HTML) 6 Page - Texas Instruments |
6 / 8 page 4N35, 4N36, 4N37 OPTOCOUPLERS SOES021C – NOVEMBER 1981 – REVISED APRIL 1998 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 APPLICATION INFORMATION The devices consist of a gallium-arsenide infrared-emitting diode and an npn silicon phototransistor. Each device is available in a 6-terminal plastic dual-in-line package, shown in Figure 9, or in a DCJ plastic dual surface-mount optocoupler package (see Mechanical Data). C L C 0.021 (0,534) 0.015 (0,381) 6 Places Seating Plane L 0.300 (7,62) T.P. (see Note A) 0.260 (6,61) 0.240 (6,09) 0.012 (0,305) 0.008 (0,203) 0.215 (5,46) 0.115 (2,92) 0.070 (1,78) 0.020 (0,51) 0.090 (2,29) 0.050 (1,27) 4 Places 0.040 (1,01) MIN 0.070 (1,78) MAX 6 Places 0.370 (9,40) 0.330 (8,38) Index Dot (see Note B) 105 ° 90 ° 1 2 3 6 5 4 (see Note C) 0.150 (3,81) 0.125 (3,17) 0.100 (2,54) T.P. (see Note A) NOTES: A. Terminals are within 0.005 (0,13) radius of true position (T.P.) with maximum material condition and unit installed. B. Terminal 1 identified by index dot. C. The dimensions given fall within JEDEC MO-001 AM dimensions. D. All linear dimensions are in inches (millimeters). Figure 9. Plastic Dual-in-Line Package |
类似零件编号 - 4N36 |
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类似说明 - 4N36 |
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