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SFR9214 数据表(PDF) 3 Page - Fairchild Semiconductor |
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SFR9214 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page SFR/U9214 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 -2 10 -1 10 0 150 o C 25 o C @ Notes : 1. V GS = 0 V 2. 250 µs Pulse Test -V SD , Source-Drain Voltage [V] 02 46 8 10 0 2 4 6 8 10 12 V DS = -200 V V DS = -125 V V DS = -50 V @ Notes : I D = -1.6 A Q G , Total Gate Charge [nC] 01234 56 0 2 4 6 8 10 12 @ Note : T J = 25 o C V GS = -20 V V GS = -10 V -I D , Drain Current [A] 24 68 10 10 -2 10 -1 10 0 25 o C 150 o C - 55 o C @ Notes : 1. V GS = 0 V 2. V DS = -40 V 3. 250 µs Pulse Test -V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -2 10 -1 10 0 @ Notes : 1. 250 µs Pulse Test 2. T C = 25 o C V GS Top : -15 V -10 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom : -4.5 V -V DS , Drain-Source Voltage [V] 10 0 10 1 0 100 200 300 400 C iss= Cgs+ Cgd ( Cds= shorted ) C oss= Cds+ Cgd C rss= Cgd @ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss -V DS , Drain-Source Voltage [V] P-CHANNEL POWER MOSFET Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source Voltage Fig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward Voltage Fig 3. On-Resistance vs. Drain Current |
类似零件编号 - SFR9214 |
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类似说明 - SFR9214 |
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