FDS8817NZ Rev.C

www.fairchildsemi.com

2

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

Drain to Source Breakdown Voltage

30

V

ΔBV

DSS

ΔT

J

Breakdown Voltage Temperature

Coefficient

20

mV/°C

Zero Gate Voltage Drain Current

1

μA

Gate to Source Leakage Current

±10

μA

On Characteristics

Gate to Source Threshold Voltage

1

1.8

3

V

ΔV

GS(th)

ΔT

J

Gate to Source Threshold Voltage

Temperature Coefficient

–6

mV/°C

Static Drain to Source On Resistance

5.4

7

m

Ω

7.0

10

7.5

11

Forward Transconductance

54

S

(Note 2)

Dynamic Characteristics

Input Capacitance

f = 1MHz

1805

2400

pF

Output Capacitance

335

445

pF

Reverse Transfer Capacitance

200

300

pF

Gate Resistance

f = 1MHz

1.4

Ω

Switching Characteristics

Turn-On Delay Time

11

22

ns

Rise Time

13

26

ns

Turn-Off Delay Time

25

40

ns

Fall Time

7

14

ns

Total Gate Charge

32

45

nC

Total Gate Charge

17

24

nC

Gate to Source Charge

6

nC

Gate to Drain “Miller” Charge

7

nC

Drain-Source Diode Characteristics

Source to Drain Diode Forward Voltage

(Note 2)

0.8

1.2

V

Reverse Recovery Time

24

36

ns

Reverse Recovery Charge

15

23

nC

a) 50°C/W when mounted on a

b) 125°C/W when mounted on a

minimum pad .

Notes:

2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%.

3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied.