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SD12CT1G 数据表(PDF) 2 Page - ON Semiconductor |
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SD12CT1G 数据表(HTML) 2 Page - ON Semiconductor |
2 / 3 page Bi−Directional TVS IPP IPP V I IR IT IT IR VRWM VC VBR VRWM VC VBR SD12CT1 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation @ 20 ms @ TL ≤ 25°C Ppk 350 W IEC 61000−4−2 (ESD) Air Contact ±30 ±30 kV IEC 61000−4−4 (EFT) 40 A Total Device Dissipation FR−5 Board, (Note 1) @ TA = 25°C Derate above 25 °C PD 200 1.5 mW mW/ °C Thermal Resistance from Junction−to−Ambient RqJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum Solder Footprint. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current QVBR Maximum Temperature Variation of VBR ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (Note 2) VRWM 12 V Breakdown Voltage IT = 1 mA, (Note 3) VBR 13.3 V Reverse Leakage Current VRWM = 12 V IR 1.0 mA Clamping Voltage Additional Clamping Voltage IPP = 5 A, (8 x 20 msec Waveform) IPP = 15 A, (8 x 20 msec Waveform) VC 19 24 V Maximum Peak Pulse Current 8 x 20 msec Waveform IPP 15 A Capacitance VR = 0 V, f = 1 MHz Cj 64 pF VR = 12 V, f = 1 MHz 36 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. |
类似零件编号 - SD12CT1G |
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类似说明 - SD12CT1G |
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