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BYG80C 数据表(PDF) 4 Page - NXP Semiconductors |
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BYG80C 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 20 page 1997 Nov 25 4 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series THERMAL CHARACTERISTICS Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.27. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.27. For more information please refer to the “General Part of associated Handbook”. V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYG80A 55 −− V BYG80B 110 −− V BYG80C 165 −− V BYG80D 220 −− V BYG80F 330 −− V BYG80G 440 −− V BYG80J 675 −− V IR reverse current VR =VRRMmax; see Figs 24 and 25 −− 10 µA IR reverse current VR =VRRMmax; Tj = 165 °C; see Figs 24 and 25 BYG80A to D −− 100 µA BYG80F; BYG80G and J −− 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.29 BYG80A to D −− 25 ns BYG80F; BYG80G and J −− 50 ns Cd diode capacitance f = 1 MHz; VR = 0; see Fig.26 BYG80A to D − 90 − pF BYG80F; BYG80G − 70 − pF BYG80J − 65 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1A/µs; see Fig.28 BYG80A to D −− 3A/ µs BYG80F; BYG80G and J −− 4A/ µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 25 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W note 2 150 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dI R dt -------- |
类似零件编号 - BYG80C |
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类似说明 - BYG80C |
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