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BYD52G 数据表(PDF) 2 Page - NXP Semiconductors |
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BYD52G 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1998 Dec 03 2 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers BYD52 series FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION Cavity free cylindrical glass SOD120 package through Implotec ™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. Fig.1 Simplified outline (SOD120) and symbol. handbook, halfpage ka MGL571 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYD52D − 200 V BYD52G − 400 V BYD52J − 600 V VR continuous reverse voltage BYD52D − 200 V BYD52G − 400 V BYD52J − 600 V IF(AV) average forward current Tamb =25 °C; printed-circuit board mounting, pitch 5 mm, see Fig.6; averaged over any 20 ms period; see Fig.2 − 0.47 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =25 °C; VR =VRRMmax − 5A Tstg storage temperature −65 +175 °C Tj junction temperature see fig.3 −65 +175 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 1 A; see Fig.4 3.6 V IR reverse current VR =VRRMmax 1 µA VR =VRRMmax; Tj = 165 °C; see Fig.5 100 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig.7 30 ns |
类似零件编号 - BYD52G |
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类似说明 - BYD52G |
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