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BY8110 数据表(PDF) 3 Page - NXP Semiconductors

部件名 BY8110
功能描述  Very fast high-voltage soft-recovery controlled avalanche rectifiers
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BY8110 数据表(HTML) 3 Page - NXP Semiconductors

  BY8110 Datasheet HTML 1Page - NXP Semiconductors BY8110 Datasheet HTML 2Page - NXP Semiconductors BY8110 Datasheet HTML 3Page - NXP Semiconductors BY8110 Datasheet HTML 4Page - NXP Semiconductors BY8110 Datasheet HTML 5Page - NXP Semiconductors BY8110 Datasheet HTML 6Page - NXP Semiconductors BY8110 Datasheet HTML 7Page - NXP Semiconductors BY8110 Datasheet HTML 8Page - NXP Semiconductors BY8110 Datasheet HTML 9Page - NXP Semiconductors Next Button
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1996 May 24
3
Philips Semiconductors
Product specification
Very fast high-voltage soft-recovery
controlled avalanche rectifiers
BY8100 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Withstands peak currents during flash-over in a picture tube.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BY8104
5kV
BY8106
8kV
BY8108
10
kV
BY8110
12
kV
BY8112
14
kV
BY8114
17
kV
BY8116
19
kV
VRW
working reverse voltage
BY8104
4kV
BY8106
6kV
BY8108
8kV
BY8110
10
kV
BY8112
12
kV
BY8114
14
kV
BY8116
16
kV
IF(AV)
average forward current
averaged over any
20 ms period;
see Figs 2 to 8
BY8104
20
mA
BY8106
10
mA
BY8108
5mA
BY8110
5mA
BY8112
5mA
BY8114
5mA
BY8116
3mA
IFRM
repetitive peak forward current
note 1
500
mA
PRSM
non-repetitive peak reverse power dissipation t = 20
µs half sinewave;
Tj =Tj max prior to surge
BY8104
1.7
kW
BY8106
2.5
kW
BY8108
3.0
kW
BY8110
3.8
kW
BY8112
5.0
kW
BY8114
5.5
kW
BY8116
6.5
kW
Tstg
storage temperature
−65
+120
°C
Tj
junction temperature
−65
+120
°C


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