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BY8206 数据表(PDF) 3 Page - NXP Semiconductors |
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BY8206 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 1998 Jul 16 3 Philips Semiconductors Product specification Ultra fast high-voltage soft-recovery controlled avalanche rectifiers BY8200 series Note 1. Withstands peak currents during flash-over in a picture tube. ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. IF(AV) average forward current averaged over any 20 ms period; see Figs 2 to 5 BY8206 − 10 mA BY8208 − 5mA BY8210 − 5mA BY8212 − 5mA IFRM repetitive peak forward current note 1 − 500 mA Tstg storage temperature −65 +175 °C Tj junction temperature BY8206 −65 +160 °C BY8208 −65 +155 °C BY8210 −65 +150 °C BY8212 −65 +145 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 10 mA; see Figs 6 to 9 BY8206 −− 19 V BY8208 −− 23 V BY8210 −− 29 V BY8212 −− 35 V IR reverse current VR =VRRM1; Tj = 120 °C −− 3 µA Qr recovery charge when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig 10 − 0.2 − nC trr reverse recovery time when switched from IF = 2 mA to IR = 4 mA; measured at IR = 1 mA; see Fig 11 −− < 45 ns Cd diode capacitance VR =0V; f=1MHz BY8206 − 0.50 − pF BY8208 − 0.42 − pF BY8210 − 0.35 − pF BY8212 − 0.30 − pF SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
类似零件编号 - BY8206 |
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类似说明 - BY8206 |
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