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BY428 数据表(PDF) 2 Page - NXP Semiconductors |
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BY428 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 1996 Sep 26 2 Philips Semiconductors Product specification Damper diode BY428 FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack • Also available with preformed leads for easy insertion. APPLICATIONS • Damper diode in high frequency horizontal deflection circuits up to 64 kHz. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD64) and symbol. 2/3 page (Datasheet) MAM104 ka , , LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRSM non-repetitive peak reverse voltage − 1500 V VRRM repetitive peak reverse voltage − 1500 V VR continuous reverse voltage − 1400 V IFWM working peak forward current Ttp =80 °C; lead length = 10 mm; see Fig.2 − 4A IFRM repetitive peak forward current − 8A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax − 50 A Tstg storage temperature −65 +175 °C Tj junction temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 4 A; Tj =Tj max; see Fig.3 1.60 V IF = 4 A; see Fig.3 1.95 V IR reverse current VR =VRmax; Tj = 150 °C 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig.6 250 ns tfr forward recovery time when switched to IF = 5 A in 50 ns; Tj =Tj max; see Fig.7 250 ns |
类似说明 - BY428 |
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