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BY359F-1500S 数据表(PDF) 1 Page - NXP Semiconductors |
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BY359F-1500S 数据表(HTML) 1 Page - NXP Semiconductors |
1 / 5 page Philips Semiconductors Preliminary specification Damper diode BY359F-1500, BY359F-1500S fast, high-voltage FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 1500 V • Fast switching • Soft recovery characteristic V F ≤ 1.8 V / 2 V • High thermal cycling performance • Isolated mounting tab I F(RMS) = 15.7 A I FSM ≤ 60 A t rr ≤ 600 ns / 350 ns GENERAL DESCRIPTION PINNING SOD100 Glass-passivated double diffused PIN DESCRIPTION rectifier diode featuring low forward voltage drop, fast reverse recovery 1 cathode and soft recovery characteristic. The device is intended for use in TV 2 anode receivers and PC monitors. tab isolated The BY359F series is supplied in the conventional leaded SOD100 package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RSM Peak non-repetitive reverse - 1500 V voltage V RRM Peak repetitive reverse voltage - 1500 V V RWM Crest working reverse voltage - 1300 V I F(peak) Peak forward current 16-32kHz TV BY359F-1500 - 10 A 31-70kHz monitor BY359F-1500S - 7 A I F(RMS) RMS forward current - 15.7 A I FRM Peak repetitive forward current sinusoidal; a = 1.57 - 60 A I FSM Peak non-repetitive forward t = 10 ms - 60 A current t = 8.3 ms - 66 A sinusoidal; T j = 150 ˚C prior to surge; with reapplied V RWM(max) T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction to with heatsink compound - - 4.8 K/W heatsink without heatsink compound - - 5.9 K/W R th j-a Thermal resistance junction to in free air. - 55 - K/W ambient k a 12 12 case September 1998 1 Rev 1.300 |
类似零件编号 - BY359F-1500S |
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类似说明 - BY359F-1500S |
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