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BY229-200 数据表(PDF) 1 Page - NXP Semiconductors

部件名 BY229-200
功能描述  Rectifier diodes fast, soft-recovery
Download  6 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BY229-200 数据表(HTML) 1 Page - NXP Semiconductors

  BY229-200 Datasheet HTML 1Page - NXP Semiconductors BY229-200 Datasheet HTML 2Page - NXP Semiconductors BY229-200 Datasheet HTML 3Page - NXP Semiconductors BY229-200 Datasheet HTML 4Page - NXP Semiconductors BY229-200 Datasheet HTML 5Page - NXP Semiconductors BY229-200 Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
BY229 series
fast, soft-recovery
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
V
R = 200 V/ 400 V/ 600 V/800 V
• Fast switching
• Soft recovery characteristic
I
F(AV) = 8 A
• High thermal cycling performance
• Low thermal resistance
I
FSM ≤ 60 A
t
rr ≤ 135 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Glass-passivated double diffused
PIN
DESCRIPTION
rectifier
diodes
featuring
low
forward voltage drop, fast reverse
1
cathode
recovery
and
soft
recovery
characteristic. The devices are
2
anode
intended for use in TV receivers,
monitors and switched mode power
tab
cathode
supplies.
The BY229 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BY229
-200
-400
-600
-800
V
RSM
Peak non-repetitive reverse
-
200
400
600
800
V
voltage
V
RRM
Peak repetitive reverse voltage
-
200
400
600
800
V
V
RWM
Crest working reverse voltage
-
150
300
500
600
V
V
R
Continuous reverse voltage
-
150
300
500
600
V
I
F(AV)
Average forward current
1
square wave;
-
8
A
δ = 0.5;
T
mb ≤ 122 ˚C
sinusoidal;
-
7
A
a = 1.57;
T
mb ≤ 125 ˚C
I
F(RMS)
RMS forward current
-
11
A
I
FRM
Repetitive peak forward current t = 25
µs; δ = 0.5;
-
16
A
T
mb ≤ 122 ˚C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
60
A
current.
t = 8.3 ms
-
66
A
sinusoidal;
T
j = 150 ˚C prior to
surge; with
reapplied V
RWM(max)
I
2tI2t for fusing
t = 10 ms
-
18
A
2s
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction temperature
-
150
˚C
k
a
12
1
tab
2
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.200


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