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STP14NK50Z 数据表(PDF) 6 Page - STMicroelectronics |
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STP14NK50Z 数据表(HTML) 6 Page - STMicroelectronics |
6 / 19 page Electrical characteristics STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - 6/19 td(off) tf Turn-off delay time Fall time VDD=250V, ID=6A, RG=4.7Ω, VGS=10V (see Figure 19) 54 12 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD=400 V, ID=12A, RG=4.7Ω, VGS=10V (see Figure 21) 9.5 9 20 ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 12 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 48 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=12A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A, di/dt = 100A/µs, VDD=35V, Tj=150°C (see Figure 21) 470 3.1 13.2 ns µC A Table 7. Switching times |
类似零件编号 - STP14NK50Z_06 |
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类似说明 - STP14NK50Z_06 |
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