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2SC4617L-AE3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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2SC4617L-AE3-R 数据表(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 www.unisonic.com.tw QW-R206-081,A ■ TYPICAL CHARACTERICS 0 .45 mA BASE TO EMITTER VOLTAGE, VBE (V) 0 0.6 1.0 1.2 1.6 COLLECTOR TO EMITTER VOLTAGE, VCE (V) 80 00.8 1.2 1.6 20 50 100 40 0.4 2.0 Grounded emitter propagation characteristics 20 10 2 0.5 5 1 0.2 0.1 0.2 0.4 0.8 1.4 VCE = 6V 60 0 Ta = 25℃ 0.40m A 0.35mA 0.30mA 0.25mA 0.20mA 0.15mA 0.10mA 0.05mA I B = 0A Grounded emitter output characteristics(Ι) COLLECTOR CURRENT, IC (mA) 200 0.2 5 10 60 20 500 50 0.5 200 100 10 DC current gain vs. collector current (Ι) Ta = 25℃ VCC = 5V 3V 1V 1 2 20 100 COLLECTOR CURRENT, IC (mA) 0.2 0.2 5 10 50 0.02 0.5 0.05 0.5 200 0.1 0.01 Collector-emitter saturation voltage vs. collector current Ta = 25℃ IC/IB = 5V 12 20 COLLECTOR CURRENT, IC (mA) 200 0.2 5 10 60 20 500 50 0.5 200 100 10 DC current gain vs. collector current (Ⅱ) 12 20 100 VCC = 5V Ta = 100℃ 25℃ 100 Ta=100℃ 25℃ 0.50mA COLLECTOR TO EMITTER VOLTAGE, VCE (V) 8 0 8 12 16 2 10 4 420 6 0 Ta = 25℃ 3μA IB = 0A Grounded emitter output characteristics(¢º) 6μA 9μ A 12 μA 15 μA 18 μA 21 μA 24 μA 27 μA 30μA 20 10 |
类似零件编号 - 2SC4617L-AE3-R |
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类似说明 - 2SC4617L-AE3-R |
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