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2SC3835 数据表(PDF) 1 Page - Unisonic Technologies |
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2SC3835 数据表(HTML) 1 Page - Unisonic Technologies |
1 / 4 page UTC2SC3835 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R214-002,A SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. TO-3PN 1 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 8 V Base Current IB 3 A Collector Current 7 A Collector Current (PULSE) Ic 14 A Collector Power Dissipation( Tc=25 °C ) Pc 70 W Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Emitter Breakdown Voltage BVCEO Ic= 50mA 120 V Collector Cut-Off Current ICBO VCB=200V, IE=0 100 μ A Emitter Cut-Off Current IEBO VEB= 8V, Ic =0 100 μ A DC Current Transfer Ratio hFE VCE= 4V,Ic= 3A 70 220 Collector-Emitter Saturation Voltage VCE(sat) Ic=3A ,IB=0.3A 0.5 V Base-Emitter Saturation Voltage VBE(sat) Ic=3A ,IB=0.3A 1.2 V Transition Frequency fT VCE=12V,IE=-0.5mA 30 MHz Output Capacitance Cob VCB= 10V, IE= 0 A,f=1MHz 110 pF Turn-on Time ton 0.5 µs Storage Time tstg 3.0 µs Fall Time tf See specified Test Circuit 0.5 µs |
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