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2SA1012-O-TF3-T 数据表(PDF) 2 Page - Unisonic Technologies |
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2SA1012-O-TF3-T 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SA1012 PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw QW-R203-015,E ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Collector-Emitter Voltage VEBO -5 V Peak Collector Current IC -5 A Power Dissipation PD 25 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25 , ℃ unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=-100µA, IE=0 -60 V Collector-Emitter Breakdown Voltage BVCEO IC=-10mA, IB=0 -50 V Emitter-Base Breakdown Voltage BVEBO IE=-100µA, IC=0 -5 V Collector Cut-off Current ICBO VCB=-50V, IE=0 -1.0 µA Emitter Cut-off Current IEBO VEB=-5V, IC=0 -1.0 µA hFE1 VCE=-1V, IC=-1A 70 240 DC Current Gain hFE2 VCE=-1V, IC=-3A 30 Collector-Emitter Saturation Voltage VCE (SAT) IC=-3A, IB=-0.15A -0.2 -0.4 V Base-Emitter Saturation Voltage VBE (SAT) IC=-3A, IB=-0.15A -0.9 -1.2 V Transition frequency fT VCE=-4V, IC=-1A 60 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 170 pF Turn-on time tON 0.1 µs Storage time tS 1.0 µs Switching time Fall time tF 0.1 µs CLASSIFICATION of hFE1 RANK O Y RANGE 70 ~ 140 120 ~ 240 |
类似零件编号 - 2SA1012-O-TF3-T |
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类似说明 - 2SA1012-O-TF3-T |
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