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MJW21195 数据表(PDF) 1 Page - ON Semiconductor

部件名 MJW21195
功能描述  16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MJW21195 数据表(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
Publication Order Number:
MJW21195/D
MJW21195 (PNP)
MJW21196 (NPN)
Preferred Devices
Silicon Power Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized
High DC Current Gain − hFE = 20 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
400
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
400
Vdc
Collector Current
− Continuous
Collector Current
− Peak (Note 1)
IC
16
30
Adc
Base Current − Continuous
IB
5.0
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25
°C
PD
200
1.43
W
W/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
− 65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.7
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
40
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5
ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
MJW21195
TO−247
30 Units/Rail
16 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS, 200 WATTS
Preferred devices are recommended choices for future use
and best overall value.
MJW21196
TO−247
30 Units/Rail
http://onsemi.com
MJW21196G
TO−247
(Pb−Free)
30 Units/Rail
30 Units/Rail
MJW21195G
TO−247
(Pb−Free)
TO−247
CASE 340L
2
1
3
MARKING DIAGRAM
MJW2119x
AYWWG
x
= 5 or 6
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
1 BASE
2 COLLECTOR
3 EMITTER


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