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MC10EP35DTR2 数据表(PDF) 5 Page - ON Semiconductor

部件名 MC10EP35DTR2
功能描述  3.3V / 5V ECL JK Flip?묯lop
Download  11 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MC10EP35DTR2 数据表(HTML) 5 Page - ON Semiconductor

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MC10EP35, MC100EP35
http://onsemi.com
5
Table 8. 100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 8)
−40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
30
40
50
30
40
50
30
40
50
mA
VOH
Output HIGH Voltage (Note 9)
2155
2280
2405
2155
2280
2405
2155
2280
2405
mV
VOL
Output LOW Voltage (Note 9)
1355
1480
1605
1355
1480
1605
1355
1480
1605
mV
VIH
Input HIGH Voltage (Single−Ended)
2075
2420
2075
2420
2075
2420
mV
VIL
Input LOW Voltage (Single−Ended)
1355
1675
1355
1675
1355
1675
mV
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
8. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V.
9. All loading with 50 W to VCC − 2.0 V.
Table 9. 100EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 10)
−40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
30
40
50
30
40
50
30
40
50
mA
VOH
Output HIGH Voltage (Note 11)
3855
3980
4105
3855
3980
4105
3855
3980
4105
mV
VOL
Output LOW Voltage (Note 11)
3055
3180
3305
3055
3180
3305
3055
3180
3305
mV
VIH
Input HIGH Voltage (Single−Ended)
3775
4120
3775
4120
3775
4120
mV
VIL
Input LOW Voltage (Single−Ended)
3055
3375
3055
3375
3055
3375
mV
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
10.Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V.
11. All loading with 50 W to VCC − 2.0 V.
Table 10. 100EP DC CHARACTERISTICS, NECL VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 12)
−40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
30
40
50
30
40
50
30
40
50
mA
VOH
Output HIGH Voltage (Note 13)
−1145 −1020
−895
−1145 −1020
−895
−1145 −1020
−895
mV
VOL
Output LOW Voltage (Note 13)
−1945 −1820 −1695 −1945 −1820 −1695 −1945 −1820 −1695
mV
VIH
Input HIGH Voltage (Single−Ended)
−1225
−880
−1225
−880
−1225
−880
mV
VIL
Input LOW Voltage (Single−Ended)
−1945
−1625 −1945
−1625 −1945
−1625
mV
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
12.Input and output parameters vary 1:1 with VCC.
13.All loading with 50 W to VCC − 2.0 V.


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