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MC10E112FNR2G 数据表(PDF) 5 Page - ON Semiconductor |
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MC10E112FNR2G 数据表(HTML) 5 Page - ON Semiconductor |
5 / 8 page MC10E112, MC100E112 http://onsemi.com 5 Table 8. AC CHARACTERISTICS VCCx= 5.0 V; VEE= 0.0 V or VCCx= 0.0 V; VEE= −5.0 V (Note 9) 0°C 25°C 85°C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit fMAX Maximum Toggle Frequency 700 700 700 MHZ tPLH Propagation Delay to Output ps tPHL D, EN 350 550 750 350 550 750 350 550 750 tSKEW Within-Device Skew ps Dn to Qn, Qn (Note 10) 80 80 80 Qna to Qnb (Note 11) 40 40 40 tJITTER Random Clock Jitter (RMS) < 1 < 1 < 1 ps tr Rise/Fall Times ps tf (20 - 80%) 275 425 700 275 425 700 275 425 700 NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 9. 10 Series: VEE can vary −0.46 V / +0.06 V. 100 Series: VEE can vary −0.46 V / +0.8 V. 10.Within-device skew is defined as identical transitions on similar paths through a device. 11. Skew defined between common OR or common NOR outputs of a single gate. Figure 3. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8020/D − Termination of ECL Logic Devices.) Driver Device Receiver Device QD Q D Zo = 50 W Zo = 50 W 50 W 50 W VTT VTT = VCC − 2.0 V |
类似零件编号 - MC10E112FNR2G |
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类似说明 - MC10E112FNR2G |
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