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LM317LBDR2 数据表(PDF) 2 Page - ON Semiconductor |
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LM317LBDR2 数据表(HTML) 2 Page - ON Semiconductor |
2 / 12 page LM317L http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Input−Output Voltage Differential VI−VO 40 Vdc Power Dissipation Case 29 (TO−92) TA = 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Case 751 (SOIC−8) (Note 1) TA = 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case PD RqJA RqJC PD RqJA RqJC Internally Limited 160 83 Internally Limited 180 45 W °C/W °C/W W °C/W °C/W Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −65 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. SOIC−8 Junction−to−Ambient Thermal Resistance is for minimum recommended pad size. Refer to Figure 23 for Thermal Resistance variation versus pad size. 2. This device series contains ESD protection and exceeds the following tests: Human Body Model, 2000 V per MIL STD 883, Method 3015. Machine Model Method, 200 V. |
类似零件编号 - LM317LBDR2 |
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类似说明 - LM317LBDR2 |
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