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BAW56WT1G 数据表(PDF) 1 Page - ON Semiconductor

部件名 BAW56WT1G
功能描述  Dual Switching Diode, Common Anode
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

BAW56WT1G 数据表(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 5
Publication Order Number:
BAW56WT1/D
1
BAW56WT1
Preferred Device
Dual Switching Diode,
Common Anode
Features
Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Reverse Voltage
VR
70
V
Forward Current
IF
200
mA
Peak Forward Surge Current
IFM(surge)
500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
200
1.6
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
625
°C/W
Total Device Dissipation
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
−55 to
+150
°C
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
SC−70
CASE 419
STYLE 4
Preferred devices are recommended choices for future use
and best overall value.
MARKING
DIAGRAM
1
2
3
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
Package
Shipping
ORDERING INFORMATION
BAW56WT1
SC−70
3000/Tape & Reel
BAW56WT1G
SC−70
(Pb−Free)
3000/Tape & Reel
ANODE
3
CATHODE
1
2
CATHODE
A1
= Device Code
M
= Date Code*
G
= Pb−Free Package
A1 M G
G
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.


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